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PDF JANTXV2N2432 Data sheet ( Hoja de datos )
| Número de pieza | JANTXV2N2432 | |
| Descripción | NPN SILICON LOW POWER TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
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TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
2N2432
2N2432A
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA > +250C
2) Derate linearly 4.0 mW/0C above TC > +250C
Symbol
VCEO
VCBO
VECO
IC
PT
Tstg
TJ
2N2432 2N2432A
30 45
30 45
15 18
100
300
600
-65 to +200
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW
0C
0C
Symbol
RθJC
Max.
0.25
Unit
mW/ 0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
IE = 100 µAdc, IB = 0
2N2432
2N2432A
V(BR)ECO
IE = 10 mAdc, IB = 0
Collector-Emitter Breakdown Current
Both
IC = 10 mAdc
2N2432
2N2432A
V(BR)CEO
Collector-Emitter Cutoff Current
VCB = 25 Vdc
VCB = 40 Vdc
2N2432
2N2432A
ICES
Min.
15
18
10
30
45
TO- 18*
(TO-206AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
10 ηAdc
10
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| JANTXV2N2432 | NPN SILICON LOW POWER TRANSISTOR | Microsemi Corporation |
| JANTXV2N2432A | NPN SILICON LOW POWER TRANSISTOR | Microsemi Corporation |
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