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PDF NTMFS4H013NF Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4H013NF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4H013NF
Power MOSFET
25 V, 269 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
Power Dissipation RqJA
(TA = 25°C, Note 1)
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
Power Dissipation RqJC
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 51 Apk, L = 0.3 mH)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
dV/dt
25 V
±20 V
43 A
2.70 W
269 A
104 W
505 A
390 mJ
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 33 A, EAS = 164 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
40.0
1.5
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
www.onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
1.4 mW
0.9 mW
TYP QGTOT
26 nC
56 nC
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G
(4)
S (1, 2, 3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 0
1
Publication Order Number:
NTMFS4H013NF/D
1 page  
NTMFS4H013NF
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1
PCB Cu Area 645.16 mm2
PCB Cu thk 2 oz
10 100 1000
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 14. GFS vs. ID
1000
100
10
1
1E−07 1E−06 1E−05
1E−04
1E−03 1E−02
PULSE WIDTH (sec)
Figure 15. Avalanche Characteristics
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4H013NFT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
NTMFS4H013NFT3G
SO8−FL
(Pb-Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM
D
SD
S H13NF
S AYWZZ
A
Y
W
= Assembly Location
= Year
= Work Week
G D ZZ = Lot Traceability
D
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NTMFS4H013NF.PDF ] | |
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