|
|
PDF NTTFS4C25N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4C25N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTTFS4C25N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NTTFS4C25N
Power MOSFET
30 V, 27 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
7.7
5.8
1.63
V
V
A
W
Continuous Drain
C(Nuorrteen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
ID
12.2 A
9.1
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD 4.1 W
ID 5.0 A
3.8
PD 0.69 W
ID 27 A
20
PD 20.2 W
IDM
TJ,
Tstg
IS
dV/dt
81
−55 to
+150
17
6.0
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 16 Apk, L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
TL
13 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 11 Apk, EAS = 6 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
17 mW @ 10 V
26.5 mW @ 4.5 V
ID MAX
27 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C25 D
S AYWWG D
GGD
4C25
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C25NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS4C25NTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number:
NTTFS4C25N/D
1 page  
NTTFS4C25N
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
100
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
100
tf
10 tr
td(on)
td(off)
1
VDD = 15 V
ID = 15 A
VGS = 10 V
0.1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10 10 ms
1
0 V < VGS < 10 V
Single Pulse
0.1 TC = 25°C
RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.01 0.1
1
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
Qgs
4
Qgd
TJ = 25°C
2
VDD = 15 V
VGS = 10 V
ID = 30 A
0
0 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
TJ = 125°C
TJ = 25°C
6
4
2
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
6
5 ID = 11 A
4
3
2
1
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTTFS4C25N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTTFS4C25N | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |