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NTTFS4C06N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTTFS4C06N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTTFS4C06N fiche technique
NTTFS4C06N
Power MOSFET
30 V, 67 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
DraintoSource Voltage
VDSS
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 85°C
VGS
ID
Power Dissipation
(Note 1)
RqJA
TA = 25°C
PD
Value
30
±20
18
13
2.16
Unit
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C ID 25.6 A
TA = 85°C
18.5
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.4 W
11 A
8
0.81 W
67 A
49
31 W
166
55 to
+150
28
7
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
68 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 20 A, EAS = 20 mJ.
© Semiconductor Components Industries, LLC, 2014
February, 2014 Rev. 1
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.2 mW @ 10 V
6.1 mW @ 4.5 V
ID MAX
67 A
NChannel MOSFET
D (58)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C06 D
S AYWWG D
GGD
4C06
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4C06NTAG WDFN8 1500 / Tape &
(PbFree)
Reel
NTTFS4C06NTWG WDFN8 5000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C06N/D

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