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NTMFS4C03N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMFS4C03N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTMFS4C03N fiche technique
NTMFS4C03N
Power MOSFET
30 V, 2.1 mW, 136 A, Single NChannel,
SO8FL
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 3)
Power Dissipation
RqJC (Notes 1, 3)
Steady
State
TC = 25°C
TC = 25°C
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2,
Power Dissipation
RqJA (Notes 1, 2, 3)
Steady
State
TA = 25°C
TA = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
30
"20
136
64
30
PD 3.1
IDM
TJ, Tstg
900
55 to
150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 53 A
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 11 A)
EAS 549 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Note 2)
RqJC
1.95 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.1 mW @ 10 V
2.8 mW @ 4.5 V
ID MAX
136 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4C03N
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4C03NT1G
Package
SO8FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4C03NT3G SO8FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 Rev. 0
1
Publication Order Number:
NTMFS4C03N/D

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