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Datasheet NTLLD4901NF-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


NTL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NTL4502NQuad Power MOSFET

NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAKt Package Features • Four N−Channel MOSFETs in a Single Package • High Drain Current (Up to 80A per Device, Single Pulse tp < 10 µs, • • • • • • • • • • • • • http://onsemi.com V(BR)DSS
ON Semiconductor
ON Semiconductor		mosfet
2NTLGD3502NPower MOSFET, Transistor

NTLGD3502N Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package Features •ăExposed Drain Package •ăExcellent Thermal Resistance for Superior Heat Dissipation •ăLow Threshold Levels •ăLow Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin Environments •ăThis i
ON Semiconductor
ON Semiconductor		mosfet
3NTLGF3402PPower MOSFET and Schottky Diode

NTLGF3402P Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY), P−Channel, 2.0 A Schottky Barrier Diode, DFN6 Features http://onsemi.com • • • • • Flat Lead 6 Terminal Package 3x3x1 mm Enhanced Thermal Characteristics Low VF and Low Leakage Schottky Diode Red
ON Semiconductor
ON Semiconductor		mosfet
4NTLJD2104PPower MOSFET, Transistor

NTLJD2104P Power MOSFET −12 V, −4.3 A, mCOOLE Dual P−Channel, 2x2 mm, WDFN package Features http://onsemi.com V(BR)DSS RDS(on) TYP 60 mW @ −4.5 V 85 mW @ −2.5 V −12 V 110 mW @ −1.8 V 140 mW @ −1.5 V 190 mW @ −1.3 V 230 mW @ −1.2 V ID MAX −3.0 A −3.0 A −
ON Semiconductor
ON Semiconductor		mosfet
5NTLJD2105LPower MOSFET, Transistor

NTLJD2105L POWER MOSFET 8 V, 4.3 A, mCool] High Side Load Switch with Level Shift, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent • • • • • • • Thermal Performance Low RDS(on) P−Channel Load Switch with N−channel
ON Semiconductor
ON Semiconductor		mosfet
6NTLJD3115PPower MOSFET, Transistor

NTLJD3115P Power MOSFET Features −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) Solution in 2x2 mm Package 1.8 V RDS(on) Rating for O
ON Semiconductor
ON Semiconductor		mosfet
7NTLJD3119CPower MOSFET, Transistor

NTLJD3119C Power MOSFET Features 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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