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PDF NTMFD4C20N Data sheet ( Hoja de datos )
| Número de pieza | NTMFD4C20N | |
| Descripción | Dual N-Channel Power MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMFD4C20N
Dual N-Channel Power
MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual
N−Channel SO8FL
Features
• Co−Packaged Power Stage Solution to Minimize Board Space
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
http://onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
RDS(ON) MAX
7.3 mW @ 10 V
10.8 mW @ 4.5 V
3.4 mW @ 10 V
5.2 mW @ 4.5 V
ID MAX
18 A
27 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
D1 3
D1 2
G1 1
9 10
D1 S1/D2
(Bottom View)
5 S2
6 S2
7 S2
8 G2
MARKING
DIAGRAM
1
DFN8
CASE 506BX
4C20N
AYWZZ
1
4C20N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1 Publication Order Number:
NTMFD4C20N/D
1 page  
NTMFD4C20N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET Symbol
Test Condition
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Q1
Q2 tRR
Charge Time
Discharge Time
Q1
Q2 ta
Q1
Q2 tb
VGS = 0 V, dIS/dt = 100 A/ms, IS =
30 A
Reverse Recovery Charge
Q1
Q2 QRR
PACKAGE PARASITIC VALUES
Source Inductance
Q1
Q2 LS
Drain Inductance
Gate Inductance
Q1
Q2 LD
Q1
Q2 LG
TA = 25°C
Gate Resistance
Q1
Q2 RG
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max
23
38
11.6
18.6
11.4
19.4
10
25
0.38
0.65
0.054
0.007
1.5
1.5
0.3 1.0 2.0
0.3 1.0 2.0
Unit
ns
nC
nH
nH
nH
W
ORDERING INFORMATION
Device
Package
Shipping†
NTMFD4C20NT1G
DFN8
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page 
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q2
100
Duty Cycle = 50%
10 20%
10%
5%
2%
1 1%
0.1
0.01 Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 28. Thermal Response
1
10 100 1000
120 100
100
80 TA = 25°C
60 10 TA = 85°C
40
20
0
0 10 20 30 40 50 60 70 80
ID (A)
Figure 29. GFS vs. ID
1
1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
PULSE WIDTH (SECONDS)
Figure 30. Avalanche Characteristics
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NTMFD4C20N.PDF ] | |
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