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NTMFD4C86N fiches techniques PDF

ON Semiconductor - Dual N-Channel SO8FL

Numéro de référence NTMFD4C86N
Description Dual N-Channel SO8FL
Fabricant ON Semiconductor 
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NTMFD4C86N fiche technique
NTMFD4C86N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 20 A / Low Side 32 A
Features
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC−DC Converters
System Voltage Rails
Point of Load
www.onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
RDS(on) MAX
5.4 mW @ 10 V
8.1 mW @ 4.5 V
2.6 mW @ 10 V
3.4 mW @ 4.5 V
ID MAX
20 A
32 A
D1 (3, 4, 9)
Figure 1. Typical Application Circuit
100
95
90
85
80 VIN = 12 V
VOUT = 1.2 V
75 VGS = 5 V
FSW = 300 kHz
70 TA = 25°C
0 5 10 15 20 25
LOAD CURRENT (A)
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
D1 4
D1 3 9 10
D1 S2
S1 2
G1 1
5 SW
6 SW
7 SW
8 G2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
4C86N
CASE 506CR
AYWZZ
1
4C86N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
Publication Order Number:
NTMFD4C86N/D

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