PDF NCP81152 Data sheet ( Hoja de datos )

Número de pieza	NCP81152
Descripción	Synchronous Buck Dual MOSFET Driver
Fabricantes	ON Semiconductor
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Hay una vista previa y un enlace de descarga de NCP81152 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! NCP81152 Synchronous Buck Dual MOSFET Driver The NCP81152 is a high−performance dual MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. Two drivers are co−packaged into a 2.5 mm x 3.5 mm QFN16 package that greatly reduces the footprint compared to two discrete drivers. Adaptive anti−cross−conduction circuitry and power saving operation provides a low−switching−loss and high−efficiency solution for notebook systems. The under−voltage lockout function guarantees the outputs are low when the supply voltage is low. Features • Adaptive Anti−Cross−Conduction Circuit • Integrated Bootstrap Diode • Zero Cross Detection • Floating Top Driver Accommodates Boost Voltages up to 35 V • Output Disable Control Turns Off Both MOSFETs • Under−voltage Lockout • Power Saving Operation Under Light Load Conditions • Thermally Enhanced Package • These are Pb−Free Devices Typical Applications • Vcore Power for Notebook Systems • Power Systems for DDR and Graphics www.onsemi.com 1 QFN16 MN SUFFIX CASE 485AW MARKING DIAGRAM 81152 ALYWG G 81152 A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS PWM1 EN1 VCC1 BST2 PWM2 EN2 1 16 SW1 GND1 DRVL1 DRVH2 SW2 GND2 © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 2 (Top View) ORDERING INFORMATION Device NCP81152MNTWG Package QFN16 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: NCP81152/D 1 page NCP81152 Table 4. NCP81152 DRIVER ELECTRICAL CHARACTERISTICS Unless otherwise stated: −40°C < TA < +100°C; VCC = 4.5 V ~ 5.5 V; BST−SW = 4.5 V ~ 5.5 V; BST = 4.5 V ~ 30 V; SWN = 0 V ~ 21 V. Parameter Test Conditions Min Typ Max Units ENABLE INPUT (EN1, EN2) Input High 3.3 V Mid−State 1.35 1.8 V Input Low 0.6 V Normal Mode Bias Current −1 1 mA Propagation Delay Time 20 40 ns SWITCH NODE (SW1, SW2) SW Leakage Current 20 mA Zero Cross Detection Threshold Voltage SW to −20 mV, ramp slowly until BG goes off −6 mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 5. PWM/EN TRUTH TABLE PWM INPUT PWM High PWM Mid PWM Mid PWM Low Enable at Mid ZCD ZCD Reset Positive current through the inductor Zero or negative current through the inductor ZCD Reset X DRVL Low High Low High Low DRVH High Low Low Low Low PWM DRVL DRVH− SW tpdlDRVL tfDRVL 90% 90% 1 V 10% tpdhDRVH trDRVH 90% tpdlDRVH tfDRVH 90% 10% trDRVL 10% Figure 2. Timing Diagram 1 V 10% tpdhDRVL www.onsemi.com 5 5 Page

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