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PDF FDS8984 Data sheet ( Hoja de datos )
| Número de pieza | FDS8984 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDS8984
N-Channel PowerTrench® MOSFET
30V, 7A, 23mΩ
May 2007
tm
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
Low gate charge
100% RG tested
RoHS Compliant
DD2DD2
DD1
DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
5
6 Q2
7
8 Q1
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
Parameter
(Note 1a)
EAS Single Pulse Avalache Energy
PD
Power Dissipation for Single Operation
Derate above 25°C
(Note 2)
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
7
30
32
1.6
13
-55 to 150
Units
V
V
A
A
mJ
W
mW/°C
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS8984
Device
FDS8984
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8984 Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE - DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
1E-3
1E-4
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
102
103
FDS8984 Rev. A1
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS8984.PDF ] | |
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