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Datasheet G4PC50F-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
G4P Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G4PC30F | IRG4PC30F PD 91459B
IRG4PC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Fast Speed IGBT
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficie  International Rectifier data | | |
| 2 | G4PC30KD | IRG4PC30KD PD -91587A
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • T International Rectifier data | | |
| 3 | G4PC30S | IRG4PC30S PD - 91586A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30S
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Indu International Rectifier data | | |
| 4 | G4PC30U | IRG4PC30U PD 91461E
IRG4PC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan International Rectifier data | | |
| 5 | G4PC40FD | IRG4PC40FD PD 91464B
IRG4PC40FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency International Rectifier data | | |
| 6 | G4PC40K | IRG4PC40K PD - 9.1585B
IRG4PC40K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standa International Rectifier data | | |
| 7 | G4PC40S | IRG4PC40S PD 91465B
IRG4PC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC p  IRF data | |
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