|
|
Numéro de référence | LBAV74LT1G | ||
Description | Monolithic Dual Switching Diode | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Featrues
z We declare that the material of product compliance with RoHS
requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LBAV74LT1G
S-LBAV74LT1G
3
1
2
SOT–23
ORDERING INFORMATION
Device
Marking
LBAV74LT1G
S-LBAV74LT1G
JA
LBAV74LT3G
S-LBAV74LT3G
JA
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
CATHODE
1
ANODE
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VR
IF
I FM(surge)
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Value
50
200
500
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 5.0 µAdc)
V (BR)
Reverse Voltage Leakage Current
IR
(V R = 50 Vdc, T J = 125°C)
(V R = 50Vdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
CD
Forward Voltage
VF
(I F = 100 mAdc)
Reverse Recovery Time
t rr
(I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
50
—
—
—
—
—
Max
—
100
0.1
2.0
1.0
4.0
Unit
Vdc
µAdc
pF
Vdc
ns
Rev.O 1/3
|
|||
Pages | Pages 3 | ||
Télécharger | [ LBAV74LT1G ] |
No | Description détaillée | Fabricant |
LBAV74LT1G | Monolithic Dual Switching Diode | Leshan Radio Company |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |