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Leshan Radio Company - Dual Serise Switching Diodes

Numéro de référence LDAN202UT1G
Description Dual Serise Switching Diodes
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LDAN202UT1G fiche technique
LESHAN RADIO COMPANY, LTD.
Dual Serise
Switching Diodes
FEATURES
Ultra high speed switching
Suitable for high packing density layout.
High reliability.
We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LDAN202UT1G
S- LDAN202UT1G
LDAN202UT3G
S- LDAN202UT3G
Marking
N
N
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Reverse Voltag
Forward Current
Peak Forward Surge Current
Forward voltage(If = 100mA )
Reverse current (Vr = 70V )
VR
Io
IFM(surge)
VF
IR
Capacitance between terminals(f =1MHz)
Reverse recovery time(Vr= 6V,If=5 mA)
CT
Trr
Value
80
100
300
1.2
0.1
3.5
4
Unit
Vdc
mAdc
mAdc
V
uA
pF
nS
LDAN202UT1G
S-LDAN202UT1G
3
1
2
SC-70
ANODE
1
ANODE
2
3
CATHODE
ELECTRICAL CHARACTERISTIC CURVES
125 50
100
75
50
25
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE :Ta (ºC)
Fig.1 Power attenuation curve
20
10
5
Ta=85ºC
2 50ºC
25ºC
1 0ºC
30ºC
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)
Fig.2 Forward characteristics
(P Type)
1000
Ta=100ºC
100 75ºC
10 50ºC
25ºC
1 0ºC
25ºC
0.1
0.01
0
10 20 30 40
REVERSE VOLTAGE : VR (V)
50
Fig.3 Reverse characteristics
(P Type)
Rev.O 1/3

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