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Leshan Radio Company - Dual Switching Diodes

Numéro de référence LBAV70WT1G
Description Dual Switching Diodes
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBAV70WT1G fiche technique
LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
FEATURE
ƽ Small plastic SMD package.
ƽ For high-speed switching applications.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAV70WT1G
S-LBAV70WT1G
LBAV70WT3G
S-LBAV70WT3G
Marking
A4
A4
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
Characteristic
Symbol
Total Device Dissipation FR–5 Board(1)
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
PD
Derate above 25°C
Thermal Resistance, Junction to Ambient RθJA
Junction and Storage Temperature
TJ, Tstg
Max
70
200
500
Max
200
1.6
625
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
V(BR)
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
IR1
IR2
CD
(VR = 0, f = 1.0 MHz)
Forward Voltage
VF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF= IR=10 mAdc, RL= 100, IR(REC)= 1.0 mAdc) (Figure 1)
trr
Forward Recovery Voltage
VRF
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
70
LBAV70WT1G
S-LBAV70WT1G
3
1
2
SC–70
ANODE
1
ANODE
2
3
CATHODE
Max
5.0
100
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
µAdc
nAdc
pF
mVdc
ns
V
Rev.O 1/4

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