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PDF DMS3014SFG Data sheet ( Hoja de datos )
| Número de pieza | DMS3014SFG | |
| Descripción | 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes Incorporated | |
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DMS3014SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
30V
RDS(ON) max
13mΩ @ VGS = 10V
14mΩ @ VGS = 4.5V
ID max
TA = 25°C
9.5A
9.0A
Features and Benefits
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) – minimize conduction losses
• Low VSD – reducing the losses due to body diode conduction
• Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• 100% UIS (Avalanche) rated
• 100% Rg tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
Top View
S Pin 1
S
S
G
D
D
D
D
Bottom View
8765
Drain
123 4
Top View
Pin Configuration
Gate
Source
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMS3014SFG-7
DMS3014SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
POWERDI is a registered trademark of Diodes Incorporated
DMS3014SFG
Document number: DS35594 Rev. 6 - 2
1 of 8
www.diodes.com
May 2012
© Diodes Incorporated
1 page  
DMS3014SFG
0.05
0.04
0.03
0.02
0.01
VGS = 2.5V
VGS = 4.5V
VGS = 10V
0.04
VGS = 4.5V
0.03
0.02
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
VGS = 4.5V
1.4 ID = 10A
VGS = 10V
1.2 ID = 20A
1.0
0.8
0
0
0.03
5 10 15 20 25
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
30
0.02
0.01
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 20A
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
3.0
2.5
2.0
1.5
ID = 10mA
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
20
18
16
14
12 TA = 25°C
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
POWERDI is a registered trademark of Diodes Incorporated
DMS3014SFG
Document number: DS35594 Rev. 6 - 2
5 of 8
www.diodes.com
May 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DMS3014SFG.PDF ] | |
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