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Número de pieza | DMN5L06TK | |
Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
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DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• ESD Protected Up To 2kV
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
ESD PROTECTED, 2kV
SOT523
Drain
TOP VIEW
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
D
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN5L06TK-7
Case
SOT523
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DAB YM
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan Feb
12
2007
U
Mar
3
2008
V
Apr May
45
2009
W
Jun Jul
67
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
2012
Z
Nov Dec
ND
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated
1 page Package Outline Dimensions
A
BC
G
H
K
N
J DL
M
Suggested Pad Layout
Y
Z
C
XE
DMN5L06TK
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
Dimensions
Z
X
Y
C
E
Value (in mm)
1.8
0.4
0.51
1.3
0.7
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
5 of 6
www.diodes.com
July 2012
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN5L06TK.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN5L06T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
DMN5L06TK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
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