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Datasheet FDY302NZ-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


FDY Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FDY1002PZMOSFET, Transistor

FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET October 2008 –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
2FDY100PZSingle P-Channel Specified PowerTrench MOSFET

January 2006 FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench proce
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
3FDY101PZSingle P-Channel Specified PowerTrench MOSFET

FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET January 2006 FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench proce
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
4FDY102PZMOSFET, Transistor

FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET April 2014 –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS =
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
5FDY2000PZDual P-Channel Specified PowerTrenchR MOSFET

January 2006 FDY2000PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY2000PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process t
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
6FDY2001PZDual P-Channel Specified PowerTrench MOSFET

January 2006 FDY2001PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY2001PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process t
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
7FDY3000NZDual N-Channel Specified PowerTrench MOSFET

FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize t
Fairchild Semiconductor
Fairchild Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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