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SEAWON - 650V N-Channel MOSFET

Numéro de référence S10N65C
Description 650V N-Channel MOSFET
Fabricant SEAWON 
Logo SEAWON 





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S10N65C fiche technique
650V N-Channel MOSFET
Description
The 10N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in
switching power supplies and adaptors.
Features
9.5A, 650V, RDS(on) = 0.7@VGS = 10 V
Low gate charge ( typical 36 nC)
Low Crss ( typical 5.8pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
S10N65C
1
TO-220
1
TO-220F
2.Drain
1.Gate
3.Source
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R JC
R CS
R JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0510-85899716
10N65
10N65F
650
10 10 *
6.5 6.5 *
40 40 *
±30
758
10
19.8
4.5
198 52
1.58 0.41
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
10N65
0.63
0.5
62.5
10N65F
2.4
--
62.5
Units
°C/W
°C/W
°C/W
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