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Panasonic Semiconductor - NPN Transistor - 2SC1573

Numéro de référence C1573
Description NPN Transistor - 2SC1573
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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C1573 fiche technique
Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA879
s Features
q High collector to emitter voltage VCEO.
q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to
base voltage
2SC1573
2SC1573A
2SC1573B
VCBO
250
300
400
2SC1573
Collector to
2SC1573A
emitter voltage
2SC1573B
VCEO
200
300
400
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
7
100
70
1
150
–55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Parameter
Collector cutoff current
Collector to emitter
voltage
2SC1573
2SC1573A
2SC1573B
Symbol
ICBO
VCEO
Conditions
VCB = 12V, IE = 0
IC = 100µA, IB = 0
min typ max Unit
2 µA
200
300 V
400
Emitter to base
voltage
2SC1573
2SC1573A
2SC1573B
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output
capacitance
2SC1573
2SC1573A
2SC1573B
VEBO
hFE*
VCE(sat)
fT
Cob
IE = 1µA, IC = 0
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
5
7
30
50
VCB = 10V, IE = 0, f = 1MHz
V
220
1.2 V
80 MHz
5 10
pF
48
*hFE Rank classification
Rank
P
Q
R
hFE 30 ~ 100 60 ~ 150
*2SC1573 for Ranks Q and R only
100 ~ 220
1

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