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PDF 74AUP1G00 Data sheet ( Hoja de datos )

Número de pieza 74AUP1G00
Descripción SINGLE 2 INPUT POSITIVE NAND GATE
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74AUP1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Description
The Advanced Ultra Low Power (AUP) CMOS logic family is designed
for low power and extended battery life in portable applications.
Pin Assignments
The 74AUP1G00 is a single two-input positive NAND gate with a
standard push-pull output designed for operation over a power supply
range of 0.8V to 3.6V. The device is fully specified for partial power
down applications using IOFF. The IOFF circuitry disables the output,
preventing damaging current backflow when the device is powered
down. The gate performs the positive Boolean function:
Y = A B or Y = A + B
Features
Advanced Ultra Low Power (AUP) CMOS
Supply Voltage Range from 0.8V to 3.6V
±4 mA Output Drive at 3.0V
Low Static Power Consumption
ICC < 0.9µA
Low Dynamic Power Consumption
CPD = 6pF (Typical at 3.6V)
Schmitt Trigger Action at all inputs makes the circuit tolerant for
slower input rise and fall time. The hysteresis is typically 250mV
at VCC = 3.0V.
IOFF Supports Partial-Power-Down Mode Operation
ESD Protection Exceeds JESD 22
2000-V Human Body Model (A114)
Exceeds 1000-V Charged Device Model (C101)
Latch-Up Exceeds 100mA per JESD 78, Class I
Leadless Packages Named per JESD30E
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Suited for Battery and Low Power Needs
Wide array of products such as:
Tablets, E-readers
Cell Phones, Personal Navigation / GPS
MP3 Players ,Cameras, Video Recorders
PCs, Ultrabooks, Notebooks, Netbooks
Computer Peripherals, Hard Drives, SSDs, CD/DVD ROMs
TVs, DVDs, DVRs, Set-Top Boxes
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
74AUP1G00
Document number: DS35145 Rev 6 - 2
1 of 16
www.diodes.com
February 2015
© Diodes Incorporated

1 page




74AUP1G00 pdf
74AUP1G00
Electrical Characteristics (continued) (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
VIH
VIL
VOH
VOL
II
IOFF
IOFF
ICC
ICC
High-Level Input Voltage
Low-Level Input Voltage
IOH = -20µA
IOH = -1.1mA
IOH = -1.7mA
High-Level Output Voltage
IOH = -1.9mA
IOH = -2.3mA
IOH = -3.1mA
IOH = -2.7mA
IOH = -4mA
IOL = 20µA
IOL = 1.1mA
IOL = 1.7mA
Low-Level Output Voltage
IOL = 1.9mA
IOL = 2.3mA
IOL = 3.1mA
IOL = 2.7mA
IOL = 4mA
Input Current
A or B Input, VI = GND to 3.6V
Power Down Leakage Current VI or VO = 0V to 3.6V
Delta Power Down Leakage
Current
VI or VO = 0V to 3.6V
Supply Current
VI = GND or VCC, IO = 0
Additional Supply Current
Input at VCC -0.6V
Other Inputs at VCC or GND
VCC
0.8V to 1.65V
1.65V to 1.95V
2.3V to 2.7V
3.0V to 3.6V
0.8V to 1.65V
1.65V to 1.95V
2.3V to 2.7V
3.0V to 3.6V
0.8V to 3.6V
1.1V
1.4V
1.65V
2.3V
3V
0.8V to 3.6V
1.1V
1.4V
1.65V
2.3V
3V
0 to 3.6V
0
0V to 0.2V
0.8V to 3.6V
3.3V
TA = -40°C to +125°C
Min Max
0.80 x VCC
0.70 x VCC
1.6 —
2.0 —
0.25 x VCC
0.30 x VCC
— 0.7
— 0.9
VCC – 0.11
0.6 x VCC
0.93
1.17
1.77
1.67
2.40
2.30
— 0.11
0.33 x VCC
— 0.41
— 0.39
— 0.36
— 0.50
— 0.36
— 0.50
— ± 0.75
— ± 3.5
± 2.5
— 3.0
— 75
Unit
V
V
V
V
µA
µA
µA
µA
µA
74AUP1G00
Document number: DS35145 Rev 6 - 2
5 of 16
www.diodes.com
February 2015
© Diodes Incorporated

5 Page





74AUP1G00 arduino
74AUP1G00
X2-DFN0808-4 Package Outline Dimensions and Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A A1
Pin #1 ID
R0.05 TYP
D
e
k
E
L
Z
E2
D2
b
A3
Seating Plane
L1
X3
C
Y2
X2 Y1
Y3
Y X1
X
Dimensions
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Value
(i0n.4m8m0 )
0.320
0.300
0.106
0.800
0.320
0.300
0.106
0.900
74AUP1G00
Document number: DS35145 Rev 6 - 2
11 of 16
www.diodes.com
February 2015
© Diodes Incorporated

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