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Diodes - PNP SURFACE MOUNT TRANSISTOR

Numéro de référence 2DB1424R
Description PNP SURFACE MOUNT TRANSISTOR
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2DB1424R fiche technique
2DB1424R
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (2DD2150)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
SOT89-3L
3E
COLLECTOR
2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
ICM
IC
Symbol
PD
RθJA
TJ, TSTG
Value
-20
-20
-6
-5
-3
Value
1
125
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
-20
-20
-6
180
Typ
-0.18
Max
-0.1
-0.1
-0.5
390
Cobo
28
fT 220
Unit
V
V
V
μA
μA
V
Conditions
IC = -50μA, IE = 0
IC = -1mA, IB = 0
IE = -50μA, IC = 0
VCB = -20V, IE = 0
VEB = -5V, IC = 0
IC = -2A, IB = -0.1A
VCE = -2V, IC = -0.1A
pF
MHz
VCB = -10V, IE = 0,
f = 1MHz
VCE = -2V, IE = 0.1A,
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31329 Rev. 2 - 2
1 of 4
www.diodes.com
2DB1424R
© Diodes Incorporated

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