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Diodes - PNP SURFACE MOUNT TRANSISTOR

Numéro de référence 2DB1119S
Description PNP SURFACE MOUNT TRANSISTOR
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2DB1119S fiche technique
2DB1119S
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
SOT89-3L
3E
COLLECTOR
2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
ICM
IC
Symbol
PD
RθJA
Tj, TSTG
Value
-25
-25
-5
-2
-1
Value
1
125
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE
Min
-25
-25
-5
140
40
fT
Cob
Typ
-0.15
-0.85
200
12
Max
-0.1
-0.1
-0.7
-1.2
280
Unit
V
V
V
μA
μA
V
V
MHz
pF
Conditions
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -20V, IE = 0
VEB = -4V, IC = 0
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
VCE = -2V, IC = -50mA
VCE = -2V, IC = -1A
VCE = -10V, IC = -50mA
f = 100MHz
VCB = -10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31298 Rev. 2 - 2
1 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated

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