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Numéro de référence | L1SS356T1 | ||
Description | Band Switching Diode | ||
Fabricant | Leshan Radio Company | ||
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1 Page
LESHAN RADIO COMPANY, LTD.
Band Switching Diode
z Applications
High frequency switching
z Features
1) Small surface mounting type.
2) High reliability.
z Construction
Silicon epitaxial planar
1
CATHODE
2
ANODE
L1SS356T1
1
2
SOD– 323
Driver Marking
L1SS356T1 = B
Absolute maximum ratings (TA=25°C)
Parameter
Symbol
DC reverse voltage
VR
DC forward current
IF
Junction temperature
Tj
Storage temperature
Tstg
Limits
35
100
125
-55~+125
Unit
V
mA
°C
°C
Electrical characteristics (TA=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF – – 1.0 V
Reverse current
IR – – 10 nA
Capacitance between terminals CT
– – 1.2 pF
Forward operating resistance rF – – 0.9 Ω
Conditions
IF=10mA
VR=25V
VR=6V, f =1MHz
IF=2mA, f =100MHz
L1SS356T1–1/3
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Pages | Pages 3 | ||
Télécharger | [ L1SS356T1 ] |
No | Description détaillée | Fabricant |
L1SS356T1 | Band Switching Diode | Leshan Radio Company |
L1SS356T1G | Band Switching Diode | Leshan Radio Company |
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