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Datasheet D2220-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
D22 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D220 | Diode (spec sheet) American Microsemiconductor diode | | |
| 2 | D2200 | NPN Transistor, 2SD2200 Ordering number:EN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mo  Sanyo data | | |
| 3 | D2201 | METAL GATE RF SILICON FET TetraFET
D2201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW  Seme LAB gate | | |
| 4 | D2201 | NPN Transistor, 2SD2201 Ordering number:EN3152
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1452/2SD2201
80V/7A Switching Applications
Features
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mo Sanyo data | | |
| 5 | D2201UK | METAL GATE RF SILICON FET TetraFET
D2201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 6 | D2202 | NPN Transistor, 2SD2202 Ordering number:EN3249
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1454/2SD2202
High-Current Switching Applications
Features
· Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2041A
[2SB1454/2SD Sanyo data | | |
| 7 | D2202UK | METAL GATE RF SILICON FET TetraFET
D2202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr Seme LAB gate | |
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