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S-LBAS70BST5G fiches techniques PDF

Leshan Radio Company - SCHOTTKY BARRIER DIODE

Numéro de référence S-LBAS70BST5G
Description SCHOTTKY BARRIER DIODE
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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S-LBAS70BST5G fiche technique
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current
High breakdown voltage
Guard ring protected
Low diode capacitance.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.Single diodes and double diodes with different
pinning are available.
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
LBAS70BST1G
S-LBAS70BST1G
LBAS70BST3G
S-LBAS70BST3G
LBAS70BST5G
S-LBAS70BST5G
Marking
R
R
R
Shipping
5000/Tape&Reel
8000/Tape&Reel
10000/Tape&Reel
LBAS70BST5G
S-LBAS70BST5G
1
SOD882
2
1
Cathode
2
Anode
Rev.A 1/4

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