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S-LRB751G-40T1G fiches techniques PDF

Leshan Radio Company - SCHOTTKY BARRIER DIODE

Numéro de référence S-LRB751G-40T1G
Description SCHOTTKY BARRIER DIODE
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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S-LRB751G-40T1G fiche technique
LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB751G-40T1G
zApplications
General rectification
zFeatures
1) Small power mold type.
(SO D-723)
2) Low VF
3) High reliability
4) Pb-Free package is available
5) S- Prefix for Automotive and O ther Applications Req uiring
Uniq ue Site and Control Change Req uirements;
AE C -Q 101 Q ualified and PPAP Capable.
zConstruction
Silicon epitaxial planar
LRB751G-40T1G
S-LRB751G-40T1G
1
2
SOD-723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak 60Hz1cyc
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
40
30
30
200
125
-40 to +125
Unit
V
V
mA
mA
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF - - 0.37
IR - - 0.5
Ct - 2 -
Unit Conditions
V IF=1mA
µA VR=30V
pF VR=1V , f=1MHz
zDEVICE MARKING AND ORDERING INFORMATION
Device
LRB751G-40T1G
S-LRB751G-40T1G
Marking
5
Shipping
4000/Tape&Reel
Rev.O 1/4

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