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Numéro de référence | SBL2035 | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Galaxy Microelectronics | ||
Logo | |||
1 Page
Production specification
Schottky Barrier Rectifier
SBL2030---SBL2060
FEATURES
z Mwtal-Semiconductor Junction with Guardring.
z Epitaxial Construction.
Pb
z
Lead-free
Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capability.
z For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
z The Plastic Material Carries U/L Recognition 94V-0.
TO-220AC
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
SBL
2030
SBL
2035
SBL
2040
SBL
2045
SBL
2050
SBL
2060
Unit
VRRM
Recurrent Peak Reverse Voltage
30 35 40 45 50 60 V
VRMS
RMS Reverse Voltage
21 25 28 32 35 42 V
VDC
IF(AV)
IFSM
DC Blocking Voltage
30 35 40 45 50 60 V
Average Forward Total Device Rectified
Current @TA=100℃
Forward Surge Current 8.3ms Single Half
Sine-wave Superimosed on Rated Load
20
250
A
A
RθJC
Thermal Resistance (Note1)
1.5 ℃/W
Tj Operating Junction Temperature Range
-55 to +125
℃
Tstg StorageTemperature Range
Note:1.Thermal resistance from junction to case.
-55 to +150
℃
T009
Rev.B
www.gmicroelec.com
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Pages | Pages 3 | ||
Télécharger | [ SBL2035 ] |
No | Description détaillée | Fabricant |
SBL2030 | Schottky Barrier Rectifier ( Diode ) | Galaxy Microelectronics |
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