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PDF FMX36S Data sheet ( Hoja de datos )
| Número de pieza | FMX36S | |
| Descripción | 20 Ampere Dual Common Cathode Super Fast Recovery Half Bridge Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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FMX32S thru FMX36S
®
FMX32S/FMX33S/FMX34S/FMX36S
Pb Free Plating Product
Pb
20 Ampere Dual Common Cathode Super Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS,Adapter and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: TO-247AD/TO-3P
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit : inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "S"
Suffix "R"
Suffix "U"
Suffix "UR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
FMX32S
FMX33S
FMX34S
Maximum Recurrent Peak Reverse Voltage VRRM
200
400
Maximum RMS Voltage
VRMS
140
280
Maximum DC Blocking Voltage
VDC 200
400
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
20.0
FMX36S UNIT
600 V
420 V
600 V
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175 A
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
TJ, TSTG
0.98
120
1.3
10.0
250
35
70
-55 to +150
1.7
V
uA
uA
nS
pF
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
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