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Toshiba - SILICON DIFFUSED TYPE ZENER DIODE

Numéro de référence 1ZB200-Z
Description SILICON DIFFUSED TYPE ZENER DIODE
Fabricant Toshiba 
Logo Toshiba 





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1ZB200-Z fiche technique
1ZB6.8~1ZB390
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
1ZB6.8~1ZB390
CONSTANT VOLTAGE REGULATION
TRANSIENT SUPPRESSORS
Unit: mm
l Average Power Dissipation
l Peak Reverse Power Dissipation
l Zener Voltage
l Tolerance of Zener Voltage
l Plastic Mold Package
: P = 1.0W
: PRSM = 200W at tw = 200µs
: VZ = 6.8~390V
: ±10%
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
Tj
Tstg
RATING
1.0
40~150
40~150
UNIT
W
°C
°C
MARK
JEDEC
JEITA
TOSHIBA
Weight: 0.18g
33F2A
1 2001-07-09

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