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PDF WPM2026 Data sheet ( Hoja de datos )

Número de pieza WPM2026
Descripción Single P-Channel Power MOSFET
Fabricantes WillSEMI 
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WPM2026
WPM2026
Single P-Channel, -20V, -3.2A, Power MOSFET
Http//:www.willsemi.com
VDS (V)
-20
Rds(on) (ȍ)
0.056@ VGS=̢4.5V
0.069@ VGS=̢2.5V
0.086@ VGS=̢1.8V
Descriptions
The WPM2026 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2026 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
SOT-23
D
3
12
GS
Pin configuration (Top view)
3
W26*
12
W26= Device Code
* = Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Marking
Order information
Device
Package Shipping
WPM2026-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 12/2011 - Rev.2.2

1 page




WPM2026 pdf
WPM2026
1750
1500
1250
1000
750
500
250
0
0
V =0V
GS
F=1MHz
Ciss
Coss
Crss
4 8 12 16 20
-V Drain-to-Source Voltage (V)
DS
Capacitance
10
8
6
4
2 TA = 25_C
0
0.01 0.1 1 10 100 600
Time (sec)
Single pulse power
1.5
1.2
0.9
T=150oC
T=25oC
0.6
0.3
0.2 0.3 0.4 0.5 0.6 0.7 0.8
-VSD-Source-to-Drain Voltage(V)
Body diode forward voltage
100
Limited
by rDS(on)
10
100 ms, 10 ms
1
0.1
0.01
0.1
TA = 25_C
Single Pulse
1 ms
10 ms
100 ms
dc, 100 s, 10 s, 1 s
1 10
VDS - Drain-to-Source Voltage (V)
Safe operating area
100
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 155_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 12/2011 - Rev.2.2

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