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NXP Semiconductors - 0.5A PNP low VCEsat (BISS) transistor

Numéro de référence PBSS3540MB
Description 0.5A PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS3540MB fiche technique
PBSS3540MB
40 V, 0.5 A PNP low VCEsat (BISS) transistor
Rev. 1 — 7 March 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
SOT883B Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2540MB.
1.2 Features and benefits
Leadless ultra small SMD plastic
package
Low package height of 0.37 mm
Low collector-emitter saturation
voltage VCEsat
High collector current capability IC and
ICM
1.3 Applications
DC-to-DC conversion
Supply line switching
Battery charger
High efficiency due to less heat
generation
AEC-Q101 qualified
Reduced Printed-Circuit Board (PCB)
requirements
LCD backlighting
Driver in low supply voltage
applications (e.g. lamps and LEDs)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp 1 ms
IC = -500 mA; IB = -50 mA; pulsed;
tp 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -40 V
- - -500 mA
- - -1 A
- 440 700 m

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