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Número de pieza | PBSS3540M | |
Descripción | PNP low V transistor | |
Fabricantes | Philips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PBSS3540M (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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DATA SHEET
BOTTOM VIEW
M3D883
PBSS3540M
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product specification
2003 Aug 12
1 page Philips Semiconductors
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
800
handbook, halfpage
hFE
600
MLE202
(1)
400 (2)
(3)
200
−010−1
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
Product specification
PBSS3540M
handb−o1o2k,0h0alfpage
VBE
(mV)
−800
(1)
(2)
−400
(3)
MLE203
0
−10−1
−1
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
−102
MLE204
(1)
(2) (3)
−1
−10−1
−1
−10 −102 −103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
handb−o1o2k,0h0alfpage
VBEsat
(mV)
−800
(1)
(2)
−400
(3)
MLE205
0
−10−1
−1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Aug 12
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet PBSS3540M.PDF ] |
Número de pieza | Descripción | Fabricantes |
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PBSS3540MB | 0.5A PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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