|
|
Numéro de référence | FX20ASJ-03 | ||
Description | HIGH-SPEED SWITCHING USE | ||
Fabricant | Mitsubishi Electric Semiconductor | ||
Logo | |||
1 Page
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX20ASJ-03
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
0.5 ± 0.1
• 4V DRIVE
• VDSS ................................................................................ –30V
• rDS (ON) (MAX) .............................................................. 0.13Ω
• ID ....................................................................................... –20A
• Integrated Fast Recovery Diode (TYP.) ...........50ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1.0
0.9 max
2.3 2.3
A
0.5 ± 0.2
0.8
123
3
1 GATE
1 2 DRAIN
3 SOURCE
4 DRAIN
24
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–20
–80
–20
–20
–80
30
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
|
|||
Pages | Pages 4 | ||
Télécharger | [ FX20ASJ-03 ] |
No | Description détaillée | Fabricant |
FX20ASJ-03 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FX20ASJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FX20ASJ-03F | P-channel Power MOS FET | Renesas |
FX20ASJ-06 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |