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Mitsubishi Electric Semiconductor - HIGH-SPEED SWITCHING USE

Numéro de référence FX20ASJ-03
Description HIGH-SPEED SWITCHING USE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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FX20ASJ-03 fiche technique
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX20ASJ-03
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
0.5 ± 0.1
4V DRIVE
VDSS ................................................................................ –30V
rDS (ON) (MAX) .............................................................. 0.13
ID ....................................................................................... –20A
Integrated Fast Recovery Diode (TYP.) ...........50ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1.0
0.9 max
2.3 2.3
A
0.5 ± 0.2
0.8
123
3
1 GATE
1 2 DRAIN
3 SOURCE
4 DRAIN
24
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–20
–80
–20
–20
–80
30
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999

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