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PDF K368 Data sheet ( Hoja de datos )
| Número de pieza | K368 | |
| Descripción | MOSFET ( Transistor ) - 2SK368 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K368 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications
Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = −100 V (min)
· High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-100
10
150
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = -80 V, VDS = 0
V (BR) GDS VDS = 0, IG = -100 mA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF)
ïYfsï
Ciss
Crss
NF
VDS = 10 V, ID = 0.1 mA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 V, VGS = 0
RG = 100 kW, f = 100 Hz
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA
Marking
Min Typ. Max Unit
¾ ¾ -1.0 nA
-100 ¾
¾
V
0.6 ¾ 6.5 mA
-0.4
¾ -3.5
V
1.5 4.6 ¾ mS
¾ 13 ¾ pF
¾ 3 ¾ pF
¾ 0.5 ¾ dB
1 2003-03-26
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K368.PDF ] | |
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