K880 Datasheet PDF - Toshiba
| Part Number | K880 | |
| Description | MOSFET ( Transistor ) - 2SK880 | |
| Manufacturers | Toshiba | |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK880
2SK880
Audio Frequency Low Noise Amplifier Applications
· High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
· High breakdown voltage: VGDS = −50 V
· Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
· High input impedance: IGSS = −1 nA (max) at VGS = −30 V
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-50
10
100
125
-55~125
Unit
V
mA
mW
°C
°C
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = -30 V, VDS = 0
V (BR) GDS VDS = 0, IG = -100 mA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
ïYfsï
Ciss
Crss
NF (1)
NF (2)
VDS = 10 V, ID = 0.1 mA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 10 Hz
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
1
Min Typ. Max Unit
¾ ¾ -1.0 nA
-50 ¾
¾
V
1.2 ¾ 14.0 mA
-0.2
¾ -1.5
V
4.0 15 ¾ mS
¾ 13 ¾ pF
¾ 3 ¾ pF
¾5¾
dB
¾1¾
2003-03-27
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K880 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K880.PDF Datasheet ] | |
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