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Toshiba - P-Channel MOSFET ( Transistor ) - 2SJ509

Numéro de référence J509
Description P-Channel MOSFET ( Transistor ) - 2SJ509
Fabricant Toshiba 
Logo Toshiba 





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J509 fiche technique
2SJ509
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ509
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drainsource ON resistance
: RDS (ON) = 1.35 (typ.)
l High forward transfer admittance : |Yfs| = 0.7 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = −100 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Ta = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
1
3
0.9
136.5
1
0.09
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
138 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-01-25

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