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FSW25N50A fiches techniques PDF

InPower Semiconductor - N-Channel MOSFET

Numéro de référence FSW25N50A
Description N-Channel MOSFET
Fabricant InPower Semiconductor 
Logo InPower Semiconductor 





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FSW25N50A fiche technique
N-Channel MOSFET
Applications:
• Uninterruptible Power Supply(UPS)
• LCD Panel Power
• SMPS Power
• DC-AC Inverter
FSW25N50
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• ESD Capability Improved
Ordering Information
PART NUMBER
FSW25N50A
PACKAGE
TO-3PN
FSW25N50A
Pb Lead Free Package and Finish
VDSS
500V
RDS(ON) (Typ.)
0.18 :
ID
25A
BRAND
FSW25N50A
G DS
TO-3PN
Not to Scale
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FSW25N50A
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
500
25
Figure 3
Figure 6
230
1.84
V
A
W
W/ oC
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=10mH
± 30
2500
V
mJ
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
Figure 8
5.0
V/ ns
VESD(G-S) Gate to Source ESD:HBM_C=100pF,R=1.5K:
6000
V
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
oC
Thermal Resistance
Symbol
RTJC
RTJA
Parameter
Junction-to-Case
Junction-to-Ambient
FSW25N50A
0.54
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2011 InPower Semiconductor Co., Ltd.
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FSW25N50A REV. A Jan. 2011

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