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PDF F21NM50N Data sheet ( Hoja de datos )
| Número de pieza | F21NM50N | |
| Descripción | STF21NM50N | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM50N
)STB21NM50N-1
t(sSTF21NM50N
cSTP21NM50N
uSTW21NM50N
550V
550V
550V
550V
550V
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
18A
18A
18A(1)
18A
18A
rod1. Limited by wire bonding
P■ 100% avalanche tested
te■ Low input capacitance and gate charge
le■ Low gate input resistance
bsoDescription
- OThe devices are realized with the second
)generation of MDmesh Technology. This
t(srevolutionary Power MOSFET associates a new
cvertical structure to the company's strip layout to
uyield one of the world's lowest on-resistance and
dgate charge. It is therefore suitable for the most
rodemanding high efficiency converters
te PApplications
Obsole■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
Marking
B21NM50N
B21NM50N
F21NM50N
P21NM50N
W21NM50N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
January 2007
Rev 6
1/18
www.st.com
18
1 page  
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18A, VGS = 0
18 A
72 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A,
di/dt=100A/µs
VDD = 100V,
(see Figure 17.)
360 ns
5 µC
27 A
trr
t(s)Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A,
di/dt=100A/µs
VDD = 100V, Tj = 150°C
(see Figure 17.)
uc1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsolete Prod2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
464
6.5
27
ns
µC
A
5/18
5 Page 
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
MIN.
mm.
TYP
MAX.
MIN.
inch
TYP.
MAX.
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.15
1.70 0.045
0.066
c 0.49
0.70 0.019
0.027
D 15.25
15.75
0.60
0.620
)E 10
10.40
0.393
0.409
t(se 2.40
2.70 0.094
0.106
ce1 4.95
5.15 0.194
0.202
uF 1.23
1.32 0.048
0.052
dH1 6.20
6.60 0.244
0.256
roJ1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
PL1 3.50
3.93 0.137
0.154
teL20 16.40
0.645
leL30 28.90
1.137
øP 3.75
3.85 0.147
0.151
Obsolete Product(s) - ObsoQ 2.65
2.95 0.104
0.116
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet F21NM50N.PDF ] | |
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