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RB541VM-40 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB541VM-40
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB541VM-40 fiche technique
Schottky Barrier Diode
RB541VM-40
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
    0.05
lLand Size Figure (Unit : mm)
0.9
lFeatures
1) Ultra small mold type
(UMD2)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2
JEDEC : SOD-323 JEITA : SC-90/A
: Manufacture date
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
fφ1.15.55±0.005.05
UMD2
lStructure (1) Cathode
(2) Anode
0.3±0.1
1.40±0.1
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
4.0±0.1
fφ1.10.055
Conditions
1.0±0.1
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
40
200
1000
125
V
mA
mA
°C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=100mA - - 0.61 V
IR
VR=40V
- - 100 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

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