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Galaxy Microelectronics - Silicon PNP Triple Diffused Type

Numéro de référence 2SB1375
Description Silicon PNP Triple Diffused Type
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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2SB1375 fiche technique
Silicon PNP Triple Diffused Type
FEATURES
z Low Saturation Voltage:VCE(sat)=-1.5V(max.)
(IC/IB=-2A/-0.2A)
Pb
z High Power Dissipation:PC=25W(TC=25) Lead-free
z Complements the 2SD2012.
Production specification
2SB1375
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Ta=25
Tc=25
Junction and Storage Temperature
-60 V
-7 V
-3 A
-0.5 A
2.0
W
25
-55 to +150
X015
Rev.A
www.gmicroelec.com
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