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IPW90R120C3 fiches techniques PDF

Infineon Technologies - Power Transistor

Numéro de référence IPW90R120C3
Description Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPW90R120C3 fiche technique
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Worldwide best R DS,on in TO247
• Ultra low gate charge
IPW90R120C3
Product Summary
V DS @ T J=25°C
R DS(on),max @ T J=25°C
Q g,typ
900 V
0.12
270 nC
PG-TO247
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPW90R120C3
Package
PG-TO247
Marking
9R120C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=8.8 A, V DD=50 V
I D=8.8 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Mounting torque
M3 and M3.5 screws
Value
36
23
96
1940
2.9
8.8
50
±20
±30
417
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 1.0
page 1
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A

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