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IPP90R500C3 fiches techniques PDF

Infineon Technologies - Power Transistor

Numéro de référence IPP90R500C3
Description Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP90R500C3 fiche technique
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
IPP90R500C3
Product Summary
V DS @ T J=25°C
R DS(on),max @ T J= 25°C
Q g,typ
900 V
0.5
68 nC
PG-TO220
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPP90R500C3
Package
PG-TO220
Marking
9R500C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=2.2 A, V DD=50 V
I D=2.2 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Mounting torque
M3 and M3.5 screws
Rev. 1.0
page 1
Value
11
6.8
24
388
0.74
2.2
50
±20
±30
156
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-07-29

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