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PDF IPW60R070C6 Data sheet ( Hoja de datos )
| Número de pieza | IPW60R070C6 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPW60R070C6
Data Sheet
Rev. 2.1, 2010-02-09
Final
Industrial & Multimarket
1 page  
600V CoolMOS™ C6 Power Transistor
IPW60R070C6
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Min.
600
2.5
-
-
Values
Typ.
-
3
-
Max.
-
3.5
5
50 -
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
-
-
-
-
0.063
100
0.07
0.164 -
Gate resistance
RG -
0.85 -
Unit Note / Test Condition
V VGS=0 V, ID=0.25 mA
VDS=VGS, ID=1.72 mA
µA VDS=600 V, VGS=0 V,
Tj=25 °C
VDS=600 V, VGS=0 V,
Tj=150 °C
nA VGS=20 V, VDS=0 V
VGS=10 V, ID=25.8 A,
Tj=25 °C
VGS=10 V, ID=25.8 A,
Tj=150 °C
f=1 MHz, open drain
Table 5 Dynamic characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Input capacitance
Output capacitance
Ciss
Coss
-
-
3800
215
-
-
pF VGS=0 V, VDS=100 V,
f=1 MHz
Effective output capacitance,
energy related1)
Co(er)
-
140 -
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time Co(tr)
related2)
-
710 -
ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
-
-
-
-
16 -
12 -
83 -
5-
ns VDD=400 V,
VGS=13 V, ID=25.8A,
RG= 1.
(see table 16
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
5 Rev. 2.1, 2010-02-09
5 Page 
600V CoolMOS™ C6 Power Transistor
IPW60R070C6
Test circuits
6 Test circuits
Table 16 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
VGS
VDS
VDS
90%
VGS
10%
td(on) tr
ton
td(off) tf
toff
Table 17 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
ID VDS
V(BR)DS
VD
VDS
ID
VDS
Table 18 Test circuit and waveform for diode recovery times
Test circuit for diode recovery times
Diode recovery waveform
RG1
ID
RG2
VDS
i
v
diF /dt
ΙF
Ι RRM
trr = tS + tF
Qrr = QS + QF
trr
tS tF
QS QF
10% Ι RRM t
dirr /dt
90% Ι RRM
VRRM
RG1 = RG2
v
SIL00088
Final Data Sheet
11 Rev. 2.1, 2010-02-09
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPW60R070C6.PDF ] | |
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