|
|
Numéro de référence | KDS112 | ||
Description | SILICON EPITAXIAL TYPE DIODE | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
Small Package.
Small Total Capacitance : CT=1.2pF(Max.).
Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Current
Junction Temperature
VR
IF
Tj
Storage Temperature Range
Tstg
RATING
30
50
125
-55 125
UNIT
V
mA
KDS112
SILICON EPITAXIAL TYPE DIODE
E
MB
M
2
13
NK
N
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25 +_ 0.15
C 0.90 +_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70
H M 0.42+_ 0.10
N 0.10 MIN
3
21
USM
Marking
Type Name
BF
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Reverse Voltage
Total Capacitance
VF
IR
VR
CT
Series Resistance
rs
TEST CONDITION
IF=2mA
VR=15V
IR=1 A
VR=6V, f=1MHz
IF=2mA, f=100MHz
MIN.
-
-
30
-
-
TYP.
-
-
-
0.8
0.6
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
A
V
pF
2008. 9. 8
Revision No : 2
1/2
|
|||
Pages | Pages 2 | ||
Télécharger | [ KDS112 ] |
No | Description détaillée | Fabricant |
KDS112 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) | KEC(Korea Electronics) |
KDS112 | SILICON EPITAXIAL TYPE DIODE | KEC |
KDS112E | SILICON EPITAXIAL TYPE DIODE | KEC |
KDS113 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) | KEC(Korea Electronics) |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |