DataSheetWiki


KDS112 fiches techniques PDF

KEC - SILICON EPITAXIAL TYPE DIODE

Numéro de référence KDS112
Description SILICON EPITAXIAL TYPE DIODE
Fabricant KEC 
Logo KEC 





1 Page

No Preview Available !





KDS112 fiche technique
SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
Small Package.
Small Total Capacitance : CT=1.2pF(Max.).
Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Current
Junction Temperature
VR
IF
Tj
Storage Temperature Range
Tstg
RATING
30
50
125
-55 125
UNIT
V
mA
KDS112
SILICON EPITAXIAL TYPE DIODE
E
MB
M
2
13
NK
N
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25 +_ 0.15
C 0.90 +_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70
H M 0.42+_ 0.10
N 0.10 MIN
3
21
USM
Marking
Type Name
BF
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Reverse Voltage
Total Capacitance
VF
IR
VR
CT
Series Resistance
rs
TEST CONDITION
IF=2mA
VR=15V
IR=1 A
VR=6V, f=1MHz
IF=2mA, f=100MHz
MIN.
-
-
30
-
-
TYP.
-
-
-
0.8
0.6
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
A
V
pF
2008. 9. 8
Revision No : 2
1/2

PagesPages 2
Télécharger [ KDS112 ]


Fiche technique recommandé

No Description détaillée Fabricant
KDS112 SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics)
KEC(Korea Electronics)
KDS112 SILICON EPITAXIAL TYPE DIODE KEC
KEC
KDS112E SILICON EPITAXIAL TYPE DIODE KEC
KEC
KDS113 SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) KEC(Korea Electronics)
KEC(Korea Electronics)

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche