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PDF FDD6637_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDD6637_F085 | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDD6637_F085
P-Channel PowerTrench® MOSFET
-35V, -21A, 18mΩ
Features
Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
Typ Qg(10) = 45nC at VGS = -10V
High performance trench technology for extremely low
rDS(on).
Qualified to AEC Q101
RoHS Compliant
Applications
Inverter
Power Supplies
December 2010
©2010 Fairchild Semiconductor Corporation
FDD6637_F085 Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics
300
100
100us
10
1ms
1
SINGLE PULSE
OPERATION IN THIS TJ = MAX RATED
AREA MAY BE
0.1 LIMITED BY rDS(on)
TC = 25oC
10ms
DC
0.3 1
10 90
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
60
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10 STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80 VDD = -5V
TJ = -55oC
60 TJ = 25oC
TJ = 175oC
40
20
0
012345
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
6
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
60
40
VGS = -10V
VGS =-6V
VGS =-5V
VGS =-4.5V
VGS =-4V
VGS =-3.5V
VGS = -3V
20
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
5
70
ID = -14A PULSE DURATION = 80μs
60 DUTY CYCLE = 0.5% MAX
50
40
30
20 TJ = 175oC
10
TJ = 25oC
0
2468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = -14A
VGS = -10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD6637_F085 Rev. C
5
www.fairchildsemi.com
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