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Fairchild Semiconductor - P-Channel 1.8V Specified PowerTrench MOSFET

Numéro de référence FDS4465_F085
Description P-Channel 1.8V Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS4465_F085 fiche technique
June 2012
FDS4465_F085
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
Power management
Load switch
Battery protection
Features
–13.5 A, –20 V.
RDS(ON) = 8.5 m@ VGS = –4.5 V
RDS(ON) = 10.5 m@ VGS = –2.5 V
RDS(ON) = 14 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High current and power handling capability
Qualified to AEC Q101
RoHS Compliant
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4465
FDS4465_F085
13’’
©2012 Fairchild Semiconductor Corporation
FDS4465_F085 Rev. C1
1
5
6
7
8
Ratings
–20
±8
–13.5
–50
2.5
1.2
1
–55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
www.fairchildsemi.com

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