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PDF IRFI510G Data sheet ( Hoja de datos )
| Número de pieza | IRFI510G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRFI510G, SiHFI510G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
8.3
2.3
3.8
Single
0.54
TO-220 FULLPAK
D
GDS
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third Generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI510GPbF
SiHFI510G-E3
IRFI510G
SiHFI510G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.4 mH, RG = 25 Ω, IAS = 4.5 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
± 20
4.5
3.2
18
0.18
60
4.5
2.7
27
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 90178
S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFI510G, SiHFI510G
Vishay Siliconix
VDS
VGS
rG
rD
D.U.T.
+- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
rG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 90178
S-Pending-Rev. A, 16-Jun-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI510G.PDF ] | |
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