TGA2573 Datasheet PDF - TriQuint Semiconductor
| Part Number | TGA2573 | |
| Description | 2-18 GHz 10 Watt GaN Amplifier | |
| Manufacturers | TriQuint Semiconductor | |
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There is a preview and TGA2573 download ( pdf file ) link at the bottom of this page. Total 16 Pages | ||
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TGA2573
2-18 GHz 10 Watt GaN Amplifier
Applications
• Military Radar
• Communications
• Electronic warfare
• Electronic counter measures
• Test Equipment
Product Features
• Frequency Range: 2 – 18 GHz
• Psat: 40.0 dBm at Vd=30 V
• PAE: 25% typical
• Small Signal Gain: 9 dB
• Return Loss: 15 dB
• Bias: Vd = 30 V, Idq = 500 mA,
Vg = -3.4 V typical
• Technology: 0.25 µm GaN on SiC
• Dimensions: 2.55 x 5.54 x 0.1 mm
General Description
TriQuint’s TGA2573 is a wideband, high power GaN
HEMT amplifier fabricated on TriQuint’s production
0.25um GaN on SiC process. Operating from 2 to 18
GHz, it achieves 40 dBm saturated output power, 25%
PAE and 9 dB small signal gain at a drain bias of 30
volts.
Fully matched to 50 ohms and with integrated DC
blocking caps on both RF ports, the TGA2573 is ideally
suited to support both commercial and defense related
applications.
The TGA2573 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Lead-free and RoHS compliant
Functional Block Diagram
Vg
4
RF
In 1
TGA2573
2
RF
3 Out
Vd
Bond Pad Configuration
Bond Pad #
1
2
3
4
Symbol
RF In
Vd
RF Out
Vg
Ordering Information
Part No.
TGA2573
ECCN
XI(c)
Description
GaN on SiC Die
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 1 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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TGA2573
2-18 GHz 10 Watt GaN Amplifier
Typical Performance (cont.)
Vd = 25 V
Output Power vs. Freq. vs. Input Power
Vd = 25 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C
42
41 35dBm
40 34dBm
39 33dBm
38 32dBm
37 31dBm
36 30dBm
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
Vd = 30 V
Output Power vs. Freq. vs. Input Power
Vd = 30 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C
42
41 35dBm
40 34dBm
39 33dBm
38 32dBm
37 31dBm
36 30dBm
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
Vd = 35 V
Output Power vs. Freq. vs. Input Power
Vd = 35 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C
42
41 35dBm
40 34dBm
39 33dBm
38 32dBm
37 31dBm
36 30dBm
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
42
41
40
39
38
37
36
35
34
33
32
1
Output Power vs. Freq. vs. Temp.
Vd = 25 V, Id = 0.5 A, Vg = -3.4 V Typical
+35 dBm Pin, +25 deg C
+35 dBm Pin, +85 deg C
3 5 7 9 11 13 15 17
Frequency (GHz)
19
42
41
40
39
38
37
36
35
34
33
32
1
Output Power vs. Freq. vs. Temp.
Vd = 30 V, Id = 0.5 A, Vg = -3.4 V Typical
+35 dBm Pin, +25 deg C
+35 dBm Pin, +85 deg C
3 5 7 9 11 13 15 17
Frequency (GHz)
19
42
41
40
39
38
37
36
35
34
33
32
1
Output Power vs. Freq. vs. Temp.
Vd = 35 V, Id = 0.5 A, Vg = -3.4 V Typical
+35 dBm Pin, +25 deg C
+35 dBm Pin, +85 deg C
+33 dBm Pin, +25 deg C
+33 dBm Pin, +85 deg C
3 5 7 9 11 13 15 17
Frequency (GHz)
19
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 5 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TGA2573 electronic component. |
| Information | Total 16 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ TGA2573.PDF Datasheet ] | |
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