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PDF RA80H1415M1 Data sheet ( Hoja de datos )
| Número de pieza | RA80H1415M1 | |
| Descripción | Silicon RF Power Modules | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 144- to 148-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>80W, T>50% @f=144-148MHz,
Pout>60W, T>50% @ f=136-174MHz,
VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (FIN)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA80H1415M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G201” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However ,it is applicable to the following exceptions of RoHS
Directions.
Electrical and electronic components containing lead in a glass or ceramic
other than dielectric ceramic in capacitors, e.g. piezoelectronic devices,
or in a glass or ceramic matrix compound.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA80H1415M1-201
Antistatic tray,
10 modules/tray
Publication Date :Jun.2013
1
1 page  
< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90 f=136MHz
80 VGG=5V
70 Pin=50mW
20
Pout 18
16
14
60 12
50 IDD 10
40 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14
Drain Voltage VDD(V)
100 20
90 f=144MHz
80 VGG=5V
70 Pin=50mW
Pout 18
16
14
60 12
50 IDD 10
40 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14
Drain Voltage VDD(V)
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90 f=148MHz
80 VGG=5V
70 Pin=50mW
20
Pout 18
16
14
60 12
50 IDD 10
40 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14
Drain Voltage VDD(V)
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90 f=174MHz
80
VGG=5V
Pin=50mW
70
20
18
Pout 16
14
60 12
50 IDD 10
40 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Publication Date :Jun.2013
5
5 Page 
< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date :Jun.2013
11
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