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PDF D1247 Data sheet ( Hoja de datos )

Número de pieza D1247
Descripción NPN Transistor - 2SD1247
Fabricantes Sanyo 
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Ordering number:1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2006A
[2SB927/2SD1247]
( ) : 2SB927
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.1A
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)1.5A, IB=(–)75mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)1.5A, IB=(–)75mA
* : The 2SB927/2SD1247 are classified by 0.1A hFE as follows : 100 R 200 140 S 280
EIAJ : SC-51
SANYO : MP
B : Base
C : Collector
E : Emitter
Ratings
(–)30
(–)25
(–)6
(–)2.5
(–)5
1.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
200 T
Ratings
min typ
100*
65 130
150
19(32)
0.18
(–0.35)
0.85
max
(–)0.1
(–)0.1
560*
0.4
(–0.6)
1.2
400 280 U 560
Unit
µA
µA
MHz
pF
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3

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